Modeling of Reactive Ion Etching for Si/Si02 Systems
نویسنده
چکیده
Molecular dynamics (MD) simulations have been used to study surface reaction dynamics of Si and Si02 etching by halogens. To perform classical MD simulations for Si02 etching reaction by halogens (C1 or F), we have constructed new sets of twoand three-body interatomic potential functions based on potential energy data obtained from ab initio quantum mechanical calculations of the electronic states. Etching yields for Si and Si02 targets are obtained from MD simulations for both beam etching and reactive ion etching (RIE). The obtained yields are in good agreement with experimental observations.
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